Indium rich InGaN solar cells grown by MOCVD
نویسندگان
چکیده
منابع مشابه
Development of indium-rich InGaN epilayers for integrated tandem solar cells
InGaN epilayers have been investigated for use in photovoltaic solar cells for the past years. At present, almost all photovoltaic device structures reported have exhibited very low short circuit currents and thus very low solar conversion efficiency. This phenomenon has been attributed to point and extended defect chemistry in InGaN epilayers (e.g. vacancies, misfit dislocations, and V-defects...
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InGaN(0001) surfaces prepared by molecular beam epitaxy have been studied using scanning tunneling microscopy and first-principles total energy calculations. Nanometer-size surface structures are observed consisting of either vacancy islands or ordered vacancy rows. The spontaneous formation of these structures is shown to be driven by significant strain in the surface layers and by the relativ...
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متن کاملSpatial control of InGaN luminescence by MOCVD selective epitaxy
Selective epitaxial growth of InGaN alloys was performed by metalorganic chemical vapor deposition (MOCVD). Templates consisted of arrays of circular etched holes in a SiO 2 mask layer, with pre-grown GaN hexagonal pyramid structures. The room temperature (300 K) photoluminescence (PL) peak wavelength increased with increasing maskopening spacing for a constant mask-opening diameter. For 5 lm d...
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We have systematically studied the influence of Si doping on the optical characteristics of InGaN/GaN multiple quantum wells (MQWs) using photoluminescence (PL), PL excitation (PLE), and time-resolved PL spectroscopy combined with studies of optically pumped stimulated emission and structural properties from these materials. The MQWs were grown on 1.8-μm-thick GaN layers on c-plane sapphire fil...
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ژورنال
عنوان ژورنال: Journal of Materials Science: Materials in Electronics
سال: 2014
ISSN: 0957-4522,1573-482X
DOI: 10.1007/s10854-014-2070-4